Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES

Zhengwang Cheng, Zongyuan Zhang, Haigen Sun, Shaojian Li, Hui Yuan, Zhijun Wang, Yan Cao, Zhibin Shao, Qi Bian, Xin Zhang, Fangsen Li, Jiagui Feng, Sunan Ding, Zhiqiang Mao, Minghu Pan

Research output: Contribution to journalArticle

Abstract

As a member of ZrHM (H = Si/Ge/Sn; M = O/S/Se/Te) family materials, which were predicted to be the candidates of topological Dirac nodal-line semimetals, ZrGeSe exhibited particular properties, such as magnetic breakdown effect in the transport measurement, different from its other isostructural compounds, informing an unique topology of the electronic band structure. However, the related experimental research is insufficient until now. Here, we present a systematic study of the band structure and Fermi surfaces (FS) of ZrGeSe by angle-resolved photoemission spectroscopy (ARPES). Our Brillouin zone (BZ) mapping shows multiple Fermi pockets such as the diamond-shaped FS around the zone center Γ point, small electron pocket encircling the X point of the BZ, and lenses-shaped FS in the Γ-M direction. The obtained Fermi velocities and effective masses were up to 9.2 eV·Å and 0.42 me, and revealing an anisotropic electronic property along different high-symmetry k-space directions. Moreover, a kink appears near the Fermi level in the linear Dirac bands along the M-X direction, probably originated from the band hybridization and has not been reported in other ZrHM-type materials. Our findings support that the ZrHM-type material family can be a new platform on which to explore exotic states of quantum matter.

Original languageEnglish (US)
Article number051105
JournalAPL Materials
Volume7
Issue number5
DOIs
StatePublished - May 1 2019

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Metalloids
Fermi surface
Photoelectron spectroscopy
Band structure
Diamond
Fermi level
Electronic properties
Lenses
Diamonds
Topology
Electrons
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Cheng, Z., Zhang, Z., Sun, H., Li, S., Yuan, H., Wang, Z., ... Pan, M. (2019). Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES. APL Materials, 7(5), [051105]. https://doi.org/10.1063/1.5084090
Cheng, Zhengwang ; Zhang, Zongyuan ; Sun, Haigen ; Li, Shaojian ; Yuan, Hui ; Wang, Zhijun ; Cao, Yan ; Shao, Zhibin ; Bian, Qi ; Zhang, Xin ; Li, Fangsen ; Feng, Jiagui ; Ding, Sunan ; Mao, Zhiqiang ; Pan, Minghu. / Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES. In: APL Materials. 2019 ; Vol. 7, No. 5.
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abstract = "As a member of ZrHM (H = Si/Ge/Sn; M = O/S/Se/Te) family materials, which were predicted to be the candidates of topological Dirac nodal-line semimetals, ZrGeSe exhibited particular properties, such as magnetic breakdown effect in the transport measurement, different from its other isostructural compounds, informing an unique topology of the electronic band structure. However, the related experimental research is insufficient until now. Here, we present a systematic study of the band structure and Fermi surfaces (FS) of ZrGeSe by angle-resolved photoemission spectroscopy (ARPES). Our Brillouin zone (BZ) mapping shows multiple Fermi pockets such as the diamond-shaped FS around the zone center Γ point, small electron pocket encircling the X point of the BZ, and lenses-shaped FS in the Γ-M direction. The obtained Fermi velocities and effective masses were up to 9.2 eV·{\AA} and 0.42 me, and revealing an anisotropic electronic property along different high-symmetry k-space directions. Moreover, a kink appears near the Fermi level in the linear Dirac bands along the M-X direction, probably originated from the band hybridization and has not been reported in other ZrHM-type materials. Our findings support that the ZrHM-type material family can be a new platform on which to explore exotic states of quantum matter.",
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Cheng, Z, Zhang, Z, Sun, H, Li, S, Yuan, H, Wang, Z, Cao, Y, Shao, Z, Bian, Q, Zhang, X, Li, F, Feng, J, Ding, S, Mao, Z & Pan, M 2019, 'Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES', APL Materials, vol. 7, no. 5, 051105. https://doi.org/10.1063/1.5084090

Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES. / Cheng, Zhengwang; Zhang, Zongyuan; Sun, Haigen; Li, Shaojian; Yuan, Hui; Wang, Zhijun; Cao, Yan; Shao, Zhibin; Bian, Qi; Zhang, Xin; Li, Fangsen; Feng, Jiagui; Ding, Sunan; Mao, Zhiqiang; Pan, Minghu.

In: APL Materials, Vol. 7, No. 5, 051105, 01.05.2019.

Research output: Contribution to journalArticle

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AU - Cheng, Zhengwang

AU - Zhang, Zongyuan

AU - Sun, Haigen

AU - Li, Shaojian

AU - Yuan, Hui

AU - Wang, Zhijun

AU - Cao, Yan

AU - Shao, Zhibin

AU - Bian, Qi

AU - Zhang, Xin

AU - Li, Fangsen

AU - Feng, Jiagui

AU - Ding, Sunan

AU - Mao, Zhiqiang

AU - Pan, Minghu

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