Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning

Alan Victor, Jayesh Nath, Dipankar Ghosh, Seymen Aygun, Walter Nagy, Jon Paul Maria, Angus I. Kingon, Michael B. Steer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.

Original languageEnglish (US)
Title of host publicationProceedings of the 36th European Microwave Conference, EuMC 2006
PublisherIEEE Computer Society
Pages87-90
Number of pages4
ISBN (Print)2960055160, 9782960055160
DOIs
StatePublished - Jan 1 2006
Event36th European Microwave Conference, EuMC 2006 - Manchester, United Kingdom
Duration: Sep 10 2006Sep 12 2006

Publication series

NameProceedings of the 36th European Microwave Conference, EuMC 2006

Other

Other36th European Microwave Conference, EuMC 2006
Country/TerritoryUnited Kingdom
CityManchester
Period9/10/069/12/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

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