Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning

Alan Victor, Jayesh Nath, Dipankar Ghosh, Seymen Aygun, Walter Nagy, Jon-Paul Maria, Angus I. Kingon, Michael B. Steer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.

Original languageEnglish (US)
Title of host publicationProceedings of the 36th European Microwave Conference, EuMC 2006
Pages87-90
Number of pages4
DOIs
StatePublished - Dec 1 2007
Event36th European Microwave Conference, EuMC 2006 - Manchester, United Kingdom
Duration: Sep 10 2006Sep 12 2006

Other

Other36th European Microwave Conference, EuMC 2006
CountryUnited Kingdom
CityManchester
Period9/10/069/12/06

Fingerprint

Ferroelectric thin films
varactor diodes
Varactors
High electron mobility transistors
field effect transistors
Tuning
tuning
oscillators
Barium strontium titanate
Electric potential
electric potential
thin films
strontium
barium
voltage controlled oscillators
Variable frequency oscillators
flatness
Phase noise
Metallizing
Conversion efficiency

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

Victor, A., Nath, J., Ghosh, D., Aygun, S., Nagy, W., Maria, J-P., ... Steer, M. B. (2007). Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning. In Proceedings of the 36th European Microwave Conference, EuMC 2006 (pp. 87-90). [4057753] https://doi.org/10.1109/EUMC.2006.281206
Victor, Alan ; Nath, Jayesh ; Ghosh, Dipankar ; Aygun, Seymen ; Nagy, Walter ; Maria, Jon-Paul ; Kingon, Angus I. ; Steer, Michael B. / Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning. Proceedings of the 36th European Microwave Conference, EuMC 2006. 2007. pp. 87-90
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abstract = "A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5{\%}. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.",
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Victor, A, Nath, J, Ghosh, D, Aygun, S, Nagy, W, Maria, J-P, Kingon, AI & Steer, MB 2007, Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning. in Proceedings of the 36th European Microwave Conference, EuMC 2006., 4057753, pp. 87-90, 36th European Microwave Conference, EuMC 2006, Manchester, United Kingdom, 9/10/06. https://doi.org/10.1109/EUMC.2006.281206

Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning. / Victor, Alan; Nath, Jayesh; Ghosh, Dipankar; Aygun, Seymen; Nagy, Walter; Maria, Jon-Paul; Kingon, Angus I.; Steer, Michael B.

Proceedings of the 36th European Microwave Conference, EuMC 2006. 2007. p. 87-90 4057753.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Victor, Alan

AU - Nath, Jayesh

AU - Ghosh, Dipankar

AU - Aygun, Seymen

AU - Nagy, Walter

AU - Maria, Jon-Paul

AU - Kingon, Angus I.

AU - Steer, Michael B.

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N2 - A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.

AB - A 1.6 GHz power oscillator with a GaN-on-Si heterostructure field effect transistor (HFET) is reported. The voltage-controlled oscillator used a thin-film barium strontium titanate (BST) interdigital varactor as the tuning element. The surface-mount varactor was fabricated using sputtered BST film and copper metallization on alumina. An output power of 1.6 W (32 dBm) is obtained with a DC conversion efficiency of 25.5%. Flat tuning sensitivity of 500 kHz/V, 49 MHz linear frequency tuning, and power flatness of better than 0.5 dB are obtained with 0-100 V tuning voltage. The maximum oscillator phase noise is -81.4 dBc/Hz at 100 kHz offset.

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Victor A, Nath J, Ghosh D, Aygun S, Nagy W, Maria J-P et al. Voltage controlled GaN-on-Si HFET power oscillator using thin-film ferroelectric varactor tuning. In Proceedings of the 36th European Microwave Conference, EuMC 2006. 2007. p. 87-90. 4057753 https://doi.org/10.1109/EUMC.2006.281206