The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)