Voltage-current characteristics of a high Tc superconducting field effect device

X. X. Xi, C. Doughty, A. Walkenhorst, S. N. Mao, Qi Li, T. Venkatesan

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Abstract

The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

Original languageEnglish (US)
Pages (from-to)2353-2355
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number19
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Xi, X. X., Doughty, C., Walkenhorst, A., Mao, S. N., Li, Q., & Venkatesan, T. (1992). Voltage-current characteristics of a high Tc superconducting field effect device. Applied Physics Letters, 61(19), 2353-2355. https://doi.org/10.1063/1.108241