Voltage-current characteristics of a high Tc superconducting field effect device

X. X. Xi, C. Doughty, A. Walkenhorst, S. N. Mao, Qi Li, T. Venkatesan

Research output: Contribution to journalArticle

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Abstract

The source-drain voltage-current characteristics of a high Tc field-effect device consisting of a YBa2Cu3O 7-x/SrTiO3/Au multilayer structure are measured. Similarities of the V-I curves to those of a metal-oxide-semiconductor field-effect transistor (MOSFET) are observed. However, we emphasize that the superconducting channel exhibits significantly lower dissipation in comparison with the inversion layer in a MOSFET. The device has a 50 Å thick YBa 2Cu3O7-x channel layer (Tc=43 K) with a high critical current density Jc (5 K) over 1×10 5 A/cm2. A transconductance of over 0.2 mS/mm and a voltage gain of 0.9 are obtained in the device.

Original languageEnglish (US)
Pages (from-to)2353-2355
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number19
DOIs
StatePublished - Dec 1 1992

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metal oxide semiconductors
electric potential
field effect transistors
transconductance
laminates
critical current
dissipation
inversions
current density
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Xi, X. X., Doughty, C., Walkenhorst, A., Mao, S. N., Li, Q., & Venkatesan, T. (1992). Voltage-current characteristics of a high Tc superconducting field effect device. Applied Physics Letters, 61(19), 2353-2355. https://doi.org/10.1063/1.108241
Xi, X. X. ; Doughty, C. ; Walkenhorst, A. ; Mao, S. N. ; Li, Qi ; Venkatesan, T. / Voltage-current characteristics of a high Tc superconducting field effect device. In: Applied Physics Letters. 1992 ; Vol. 61, No. 19. pp. 2353-2355.
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Xi, XX, Doughty, C, Walkenhorst, A, Mao, SN, Li, Q & Venkatesan, T 1992, 'Voltage-current characteristics of a high Tc superconducting field effect device', Applied Physics Letters, vol. 61, no. 19, pp. 2353-2355. https://doi.org/10.1063/1.108241

Voltage-current characteristics of a high Tc superconducting field effect device. / Xi, X. X.; Doughty, C.; Walkenhorst, A.; Mao, S. N.; Li, Qi; Venkatesan, T.

In: Applied Physics Letters, Vol. 61, No. 19, 01.12.1992, p. 2353-2355.

Research output: Contribution to journalArticle

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AU - Xi, X. X.

AU - Doughty, C.

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AU - Li, Qi

AU - Venkatesan, T.

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