Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

Jia Mian Hu, T. N. Yang, L. Q. Chen, C. W. Nan

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic- ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means.

Original languageEnglish (US)
Article number194301
JournalJournal of Applied Physics
Volume113
Issue number19
DOIs
StatePublished - May 21 2013

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magnetic domains
electric potential
microelectronics
flexibility
engineering
thin films
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands. / Hu, Jia Mian; Yang, T. N.; Chen, L. Q.; Nan, C. W.

In: Journal of Applied Physics, Vol. 113, No. 19, 194301, 21.05.2013.

Research output: Contribution to journalArticle

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