@inproceedings{25b0393e294a41c684d4bd2776aa3794,
title = "Wafer-level near zero field spin dependent charge pumping: Effects of nitrogen on 4H-SiC MOSFETs",
abstract = "In this work, we describe a new way to measure spin dependent charge capture events at metal-oxide-semiconductor field-effect transistor interfaces (MOSFET) called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that nitric oxide post oxidation anneals have a significant effect on the spectra obtained from 4H-silicon carbide MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.",
author = "Anders, {Mark A.} and Lenahan, {Patrick M.} and Ryan, {J. T.}",
note = "Funding Information: This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Commerce or the United States Government. Additionally, certain commercial equipment, instruments, or materials are identified in this paper to foster understanding. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",
year = "2020",
doi = "10.4028/www.scientific.net/MSF.1004.573",
language = "English (US)",
isbn = "9783035715798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "573--580",
editor = "Hiroshi Yano and Takeshi Ohshima and Kazuma Eto and Takeshi Mitani and Shinsuke Harada and Yasunori Tanaka",
booktitle = "Silicon Carbide and Related Materials 2019",
}