Wafer-level near zero field spin dependent charge pumping: Effects of nitrogen on 4H-SiC MOSFETs

Mark A. Anders, Patrick M. Lenahan, J. T. Ryan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we describe a new way to measure spin dependent charge capture events at metal-oxide-semiconductor field-effect transistor interfaces (MOSFET) called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that nitric oxide post oxidation anneals have a significant effect on the spectra obtained from 4H-silicon carbide MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2019
EditorsHiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
PublisherTrans Tech Publications Ltd
Pages573-580
Number of pages8
ISBN (Print)9783035715798
DOIs
StatePublished - 2020
Event18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, Japan
Duration: Sep 29 2019Oct 4 2019

Publication series

NameMaterials Science Forum
Volume1004 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
CountryJapan
CityKyoto
Period9/29/1910/4/19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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