Wafer mapping of the transverse piezoelectric coefficient, e 31,f, using the wafer flexure technique with sputter deposited Pt strain gauges

Rudeger H T Wilke, Paul J. Moses, Pierre Jousse, Charles Yeager, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Measurement of the transverse piezoelectric coefficient (e 31,f) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e 31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr 0.52Ti 0.48O 3 thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5% of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e 31,f, allows for a non-destructive mapping of the transverse piezoelectric coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e 31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr 0.52Ti 0.48O 3 film made deposited on a 4 in. platinized silicon wafer by the sol-gel process show a high degree of uniformity, with e 31,f of -6.37 ± 0.60 C/m 2 for points measured within r = 3 cm.

Original languageEnglish (US)
Pages (from-to)152-157
Number of pages6
JournalSensors and Actuators, A: Physical
Volume173
Issue number1
DOIs
StatePublished - Jan 1 2012

Fingerprint

flexing
strain gages
Strain gages
Gages
wafers
coefficients
Thin films
footprints
sol-gel processes
thin films
Silicon wafers
Sol-gel process
Transducers
transducers
Actuators
actuators
Electrodes
electrodes
sensors
Sensors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Instrumentation

Cite this

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title = "Wafer mapping of the transverse piezoelectric coefficient, e 31,f, using the wafer flexure technique with sputter deposited Pt strain gauges",
abstract = "Measurement of the transverse piezoelectric coefficient (e 31,f) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e 31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr 0.52Ti 0.48O 3 thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5{\%} of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e 31,f, allows for a non-destructive mapping of the transverse piezoelectric coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e 31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr 0.52Ti 0.48O 3 film made deposited on a 4 in. platinized silicon wafer by the sol-gel process show a high degree of uniformity, with e 31,f of -6.37 ± 0.60 C/m 2 for points measured within r = 3 cm.",
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Wafer mapping of the transverse piezoelectric coefficient, e 31,f, using the wafer flexure technique with sputter deposited Pt strain gauges. / Wilke, Rudeger H T; Moses, Paul J.; Jousse, Pierre; Yeager, Charles; Trolier-McKinstry, Susan E.

In: Sensors and Actuators, A: Physical, Vol. 173, No. 1, 01.01.2012, p. 152-157.

Research output: Contribution to journalArticle

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