Wafer-scale growth of VO 2 thin films using a combinatorial approach

Hai Tian Zhang, Lei Zhang, Debangshu Mukherjee, Yuan Xia Zheng, Ryan C. Haislmaier, Nasim Alem, Roman Engel-Herbert

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO 2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that "electronic grade" transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems.

Original languageEnglish (US)
Article number8475
JournalNature communications
Volume6
DOIs
StatePublished - Oct 9 2015

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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