1D ferroelectric nanostructures are promising for enhanced ferroelectric and piezoelectric performance on the nanoscale, however, their synthesis at the wafer scale using industrially compatible processes is challenging. In order to advance the nanostructure-based electronics, it is imperative to develop a silicon-compatible growth technique yielding high volumetric density and an ordered arrangement. Here, a major breakthrough is provided in addressing this need and ordered and close-packed single crystalline ferroelectric nanorod arrays, of composition PbZr0.52Ti0.48O3 (PZT), grown on commercial grade 3 in. silicon wafer are demonstrated. PZT nanorods exhibit enhanced piezoelectric and ferroelectric performance compared to thin films of similar dimensions. Sandwich structured architecture utilizing 1D PZT nanorod arrays and 2D reduced graphene oxide thin film electrodes is fabricated to provide electrical connection. Combined, these results offer a clear pathway toward integration of ferroelectric nanodevices with commercial silicon electronics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics