TY - JOUR
T1 - Wake-Up in Al1−xBxN Ferroelectric Films
AU - Zhu, Wanlin
AU - He, Fan
AU - Hayden, John
AU - Fan, Zhongming
AU - Yang, Jung In
AU - Maria, Jon Paul
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
The authors gratefully acknowledge funding from DARPA (Defense Advanced Research Projects Agency) through the Tunable Ferroelectric Nitrides (TUFEN), program (grants HR0011‐20‐9‐0047 and W911NF‐20‐2‐0274). The authors would also like to thank Prof. Geoff Brennecka of the Colorado School of Mines and Prof. Clive Randall of The Pennsylvania State University for very helpful discussions.
Funding Information:
The authors gratefully acknowledge funding from DARPA (Defense Advanced Research Projects Agency) through the Tunable Ferroelectric Nitrides (TUFEN), program (grants HR0011-20-9-0047 and W911NF-20-2-0274). The authors would also like to thank Prof. Geoff Brennecka of the Colorado School of Mines and Prof. Clive Randall of The Pennsylvania State University for very helpful discussions.
Publisher Copyright:
© 2021 Wiley-VCH GmbH.
PY - 2022/6
Y1 - 2022/6
N2 - The polarization wake-up process is demonstrated here for ferroelectric switching in epitaxial Al0.93B0.07N films on W coated c-axis oriented Al2O3 (sapphire) substrates. During the wake-up process, the remanent polarization grows from ≈0 to >100 µC cm−2. As it does so, both the reversible and irreversible Rayleigh coefficients rise substantially, suggesting that the concentration of mobile interfaces that separate regions of opposite dipole orientation is increasing. The irreversible Rayleigh coefficient is very small (≈3.5 × 10−4 cm kV−1), four to five orders of magnitude below those of perovskite ferroelectric films such as PbZr0.52Ti0.48O3. These small values are consistent with the high coercive fields observed in the nitride ferroelectrics. The temperature dependence of the Rayleigh coefficients suggests that the interface motion is thermally activated. On increasing frequency, the Rayleigh coefficients drop, suggesting time-dependent pinning processes also occur in this family of materials. With information from anisotropic etching experiments upon field-cycling, a self-consistent model that describes a polar domain microstructure evolution process during wake-up is proposed.
AB - The polarization wake-up process is demonstrated here for ferroelectric switching in epitaxial Al0.93B0.07N films on W coated c-axis oriented Al2O3 (sapphire) substrates. During the wake-up process, the remanent polarization grows from ≈0 to >100 µC cm−2. As it does so, both the reversible and irreversible Rayleigh coefficients rise substantially, suggesting that the concentration of mobile interfaces that separate regions of opposite dipole orientation is increasing. The irreversible Rayleigh coefficient is very small (≈3.5 × 10−4 cm kV−1), four to five orders of magnitude below those of perovskite ferroelectric films such as PbZr0.52Ti0.48O3. These small values are consistent with the high coercive fields observed in the nitride ferroelectrics. The temperature dependence of the Rayleigh coefficients suggests that the interface motion is thermally activated. On increasing frequency, the Rayleigh coefficients drop, suggesting time-dependent pinning processes also occur in this family of materials. With information from anisotropic etching experiments upon field-cycling, a self-consistent model that describes a polar domain microstructure evolution process during wake-up is proposed.
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U2 - 10.1002/aelm.202100931
DO - 10.1002/aelm.202100931
M3 - Article
AN - SCOPUS:85121375851
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 6
M1 - 2100931
ER -