Wall velocities, switching times, and the stabilization mechanism of 180° domains in congruent LiTaO3 crystals

Venkatraman Gopalan, Terence E. Mitchell

Research output: Contribution to journalArticle

108 Citations (Scopus)

Abstract

A systematic study of the kinetics of 180° domains as a function of external electric field is presented for Z-cut LiTaO3 single crystal wafers at room temperature using transient current measurements combined with nondestructive and real-time imaging of 180° domains by light microscopy. The switching time, wall velocity, and nucleation rate follow an exponential behavior with the applied field. A model is proposed which shows that the nucleation and sideways growth of domains play approximately equal parts in determining the switching time. A domain stabilization process occurs on the time scale of a few seconds even at electric fields where the switching time is milliseconds or less. We show that this stabilization process has a strong correlation to the internal fields in the crystal.

Original languageEnglish (US)
Pages (from-to)941-954
Number of pages14
JournalJournal of Applied Physics
Volume83
Issue number2
DOIs
StatePublished - Jan 15 1998

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stabilization
crystals
nucleation
electric fields
wafers
microscopy
single crystals
kinetics
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Wall velocities, switching times, and the stabilization mechanism of 180° domains in congruent LiTaO3 crystals. / Gopalan, Venkatraman; Mitchell, Terence E.

In: Journal of Applied Physics, Vol. 83, No. 2, 15.01.1998, p. 941-954.

Research output: Contribution to journalArticle

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