Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon

Lei Chen, Xin He, Hongshen Liu, Linmao Qian, Seong Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The isotherm thickness and hydrogen-bonding interactions of water layers adsorbed on hydrophilic and hydrophobic surfaces were quantified and compared. The hydrophilic and hydrophobic surfaces were modeled with an OH-terminated native oxide layer on silicon and a HF-etched silicon terminated with hydrogen, respectively. The silicon substrate allows the use of attenuated total reflection infrared (ATR-IR) spectroscopy for quantitative measurement of adsorbed water without interferences from the gas phase water. On the hydrophilic Si-OH surface, the average thickness of the strongly hydrogen-bonded water layer increases up to ∼2 molecular layers as relative humidity (RH) increases, beyond which the weakly hydrogen-bonded structure is dominant. On the hydrophobic Si-H surface, the adsorbed water layer consists predominantly of the weakly hydrogen-bonded structure and its average thickness remains less than a monolayer even at RH = 90%. The differences in the thickness and structure of adsorbed water layers on hydrophilic versus hydrophobic surfaces found from ATR-IR measurements provide critical insights needed for better understanding of various physical processes affected by water adsorption in ambient conditions.

Original languageEnglish (US)
Pages (from-to)11385-11391
Number of pages7
JournalJournal of Physical Chemistry C
Volume122
Issue number21
DOIs
StatePublished - May 31 2018

Fingerprint

Silicon
Adsorption
adsorption
Water
silicon
Hydrogen
water
hydrogen
humidity
Atmospheric humidity
infrared reflection
Oxides
Isotherms
Infrared spectroscopy
Monolayers
Hydrogen bonds
isotherms
Gases
infrared spectroscopy
vapor phases

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Chen, Lei ; He, Xin ; Liu, Hongshen ; Qian, Linmao ; Kim, Seong. / Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon. In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 21. pp. 11385-11391.
@article{2ab4f0354351489eadcfd199aa5a636c,
title = "Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon",
abstract = "The isotherm thickness and hydrogen-bonding interactions of water layers adsorbed on hydrophilic and hydrophobic surfaces were quantified and compared. The hydrophilic and hydrophobic surfaces were modeled with an OH-terminated native oxide layer on silicon and a HF-etched silicon terminated with hydrogen, respectively. The silicon substrate allows the use of attenuated total reflection infrared (ATR-IR) spectroscopy for quantitative measurement of adsorbed water without interferences from the gas phase water. On the hydrophilic Si-OH surface, the average thickness of the strongly hydrogen-bonded water layer increases up to ∼2 molecular layers as relative humidity (RH) increases, beyond which the weakly hydrogen-bonded structure is dominant. On the hydrophobic Si-H surface, the adsorbed water layer consists predominantly of the weakly hydrogen-bonded structure and its average thickness remains less than a monolayer even at RH = 90{\%}. The differences in the thickness and structure of adsorbed water layers on hydrophilic versus hydrophobic surfaces found from ATR-IR measurements provide critical insights needed for better understanding of various physical processes affected by water adsorption in ambient conditions.",
author = "Lei Chen and Xin He and Hongshen Liu and Linmao Qian and Seong Kim",
year = "2018",
month = "5",
day = "31",
doi = "10.1021/acs.jpcc.8b01821",
language = "English (US)",
volume = "122",
pages = "11385--11391",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "21",

}

Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon. / Chen, Lei; He, Xin; Liu, Hongshen; Qian, Linmao; Kim, Seong.

In: Journal of Physical Chemistry C, Vol. 122, No. 21, 31.05.2018, p. 11385-11391.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon

AU - Chen, Lei

AU - He, Xin

AU - Liu, Hongshen

AU - Qian, Linmao

AU - Kim, Seong

PY - 2018/5/31

Y1 - 2018/5/31

N2 - The isotherm thickness and hydrogen-bonding interactions of water layers adsorbed on hydrophilic and hydrophobic surfaces were quantified and compared. The hydrophilic and hydrophobic surfaces were modeled with an OH-terminated native oxide layer on silicon and a HF-etched silicon terminated with hydrogen, respectively. The silicon substrate allows the use of attenuated total reflection infrared (ATR-IR) spectroscopy for quantitative measurement of adsorbed water without interferences from the gas phase water. On the hydrophilic Si-OH surface, the average thickness of the strongly hydrogen-bonded water layer increases up to ∼2 molecular layers as relative humidity (RH) increases, beyond which the weakly hydrogen-bonded structure is dominant. On the hydrophobic Si-H surface, the adsorbed water layer consists predominantly of the weakly hydrogen-bonded structure and its average thickness remains less than a monolayer even at RH = 90%. The differences in the thickness and structure of adsorbed water layers on hydrophilic versus hydrophobic surfaces found from ATR-IR measurements provide critical insights needed for better understanding of various physical processes affected by water adsorption in ambient conditions.

AB - The isotherm thickness and hydrogen-bonding interactions of water layers adsorbed on hydrophilic and hydrophobic surfaces were quantified and compared. The hydrophilic and hydrophobic surfaces were modeled with an OH-terminated native oxide layer on silicon and a HF-etched silicon terminated with hydrogen, respectively. The silicon substrate allows the use of attenuated total reflection infrared (ATR-IR) spectroscopy for quantitative measurement of adsorbed water without interferences from the gas phase water. On the hydrophilic Si-OH surface, the average thickness of the strongly hydrogen-bonded water layer increases up to ∼2 molecular layers as relative humidity (RH) increases, beyond which the weakly hydrogen-bonded structure is dominant. On the hydrophobic Si-H surface, the adsorbed water layer consists predominantly of the weakly hydrogen-bonded structure and its average thickness remains less than a monolayer even at RH = 90%. The differences in the thickness and structure of adsorbed water layers on hydrophilic versus hydrophobic surfaces found from ATR-IR measurements provide critical insights needed for better understanding of various physical processes affected by water adsorption in ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=85046707167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046707167&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.8b01821

DO - 10.1021/acs.jpcc.8b01821

M3 - Article

VL - 122

SP - 11385

EP - 11391

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 21

ER -