Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2Se 3

Sadashige Matsuo, Tomohiro Koyama, Kazutoshi Shimamura, Tomonori Arakawa, Yoshitaka Nishihara, Daichi Chiba, Kensuke Kobayashi, Teruo Ono, Cui Zu Chang, Ke He, Xu Cun Ma, Qi Kun Xue

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Abstract

In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi 2Se 3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

Original languageEnglish (US)
Article number075440
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number7
DOIs
StatePublished - Feb 29 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Matsuo, S., Koyama, T., Shimamura, K., Arakawa, T., Nishihara, Y., Chiba, D., Kobayashi, K., Ono, T., Chang, C. Z., He, K., Ma, X. C., & Xue, Q. K. (2012). Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi 2Se 3 Physical Review B - Condensed Matter and Materials Physics, 85(7), [075440]. https://doi.org/10.1103/PhysRevB.85.075440