Wet-etch patterning of lead zirconate titanate (PZT) thick films for microelectromechanical systems (MEMS) applications

L. P. Wang, R. Wolf, Q. Zhou, S. Trolier-McKinstry, R. J. Davis

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

Lead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two-step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45 °C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1 kV/cm, all similar to those of unpatterned films of the same thickness.

Original languageEnglish (US)
Pages (from-to)EE5391-EE5396
JournalMaterials Research Society Symposium - Proceedings
Volume657
StatePublished - Dec 1 2001
EventMaterial Science of Microelectromechanical Systems (MEMS) Devices III - Boston, MA, United States
Duration: Nov 27 2000Nov 28 2000

Fingerprint

Thick films
microelectromechanical systems
MEMS
thick films
metal fluorides
Electromechanical coupling
Remanence
Photoresists
Dielectric losses
Fluorides
dielectric loss
photoresists
Sol-gels
Film thickness
lead titanate zirconate
Permittivity
film thickness
selectivity
Metals
gels

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Wet-etch patterning of lead zirconate titanate (PZT) thick films for microelectromechanical systems (MEMS) applications",
abstract = "Lead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two-step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45 °C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6{\%}, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1 kV/cm, all similar to those of unpatterned films of the same thickness.",
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Wet-etch patterning of lead zirconate titanate (PZT) thick films for microelectromechanical systems (MEMS) applications. / Wang, L. P.; Wolf, R.; Zhou, Q.; Trolier-McKinstry, S.; Davis, R. J.

In: Materials Research Society Symposium - Proceedings, Vol. 657, 01.12.2001, p. EE5391-EE5396.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Wet-etch patterning of lead zirconate titanate (PZT) thick films for microelectromechanical systems (MEMS) applications

AU - Wang, L. P.

AU - Wolf, R.

AU - Zhou, Q.

AU - Trolier-McKinstry, S.

AU - Davis, R. J.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Lead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two-step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45 °C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1 kV/cm, all similar to those of unpatterned films of the same thickness.

AB - Lead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two-step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45 °C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1 kV/cm, all similar to those of unpatterned films of the same thickness.

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