What triggers NBTI? An "on the fly" electron spin resonance approach

J. T. Ryan, Patrick M. Lenahan, T. Grasser, H. Enichlmair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a means to perform "on the fly" electron spin resonance (ESR) measurements of NBTI defect generation. The approach permits ESR measurements to be performed during NBTI stress void of any recovery contamination. We demonstrate that elevated temperature (100°C) and modest negative polarity oxide electric field (<5MV/cm) generates ESR spectra of E' oxide defects. (These defects are holes trapped in oxygen vacancies.) When similar measurements are made at elevated temperature and no oxide bias, E' center spectra are not observed. When ESR measurements are made with identical negative oxide bias at room temperature, E' center spectra are not observed. Furthermore, we demonstrate that the NBTI induced E' center spectrum disappears, a recovery phenomena, when the NBTI stressing condition is removed. These observations indicate that NBTI is triggered by inversion layer hole capture at an E' precursor site (an oxygen vacancy) which then leads to the depassivation of nearby interface states (Pb centers).

Original languageEnglish (US)
Title of host publication2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
Pages42-45
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States
Duration: Oct 18 2009Oct 22 2009

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2009 IEEE International Integrated Reliability Workshop, IIRW 2009
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/18/0910/22/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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