Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?

A. Nidhi; V. Saripalli; Vijaykrishnan Narayanan; Y. Kimura; R. Arghavani; S. Datta

doi:10.1109/DRC.2012.6256968

Will strong quantum confinement effect limit low V _CC logic application of III-V FINFETs?

A. Nidhi, V. Saripalli, Vijaykrishnan Narayanan, Y. Kimura, R. Arghavani, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We compared the impact of Fin LER and Lg variations in Si and In _0.53Ga _0.47As FINFETs, for the first time. Better electrostatics in In _0.53Ga _0.47As than in Si, due to higher effective channel length from lower SD doping in In _0.53Ga _0.47As, reduces Lg variation impact. Strong quantum confinement effects in In _0.53Ga _0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In _0.53Ga _0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In _0.53Ga _0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	231-232
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6256968
State	Published - 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Other

Other	70th Device Research Conference, DRC 2012
Country	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2012.6256968

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@inproceedings{75ac62e2562b4eac805e33f91d057d67,

title = "Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?",

abstract = "We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.",

author = "A. Nidhi and V. Saripalli and Vijaykrishnan Narayanan and Y. Kimura and R. Arghavani and S. Datta",

year = "2012",

doi = "10.1109/DRC.2012.6256968",

language = "English (US)",

isbn = "9781467311618",

pages = "231--232",

booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",