Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?

A. Nidhi, V. Saripalli, Vijaykrishnan Narayanan, Y. Kimura, R. Arghavani, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages231-232
Number of pages2
DOIs
StatePublished - 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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