Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?

A. Nidhi, V. Saripalli, Vijaykrishnan Narayanan, Y. Kimura, R. Arghavani, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages231-232
Number of pages2
DOIs
StatePublished - 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012 → Jun 20 2012

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/12 → 6/20/12

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Quantum confinement
Electrostatics
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Nidhi, A., Saripalli, V., Narayanan, V., Kimura, Y., Arghavani, R., & Datta, S. (2012). Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs? In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 231-232). [6256968] https://doi.org/10.1109/DRC.2012.6256968
Nidhi, A. ; Saripalli, V. ; Narayanan, Vijaykrishnan ; Kimura, Y. ; Arghavani, R. ; Datta, S. / Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?. 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. pp. 231-232
@inproceedings{75ac62e2562b4eac805e33f91d057d67,
title = "Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?",
abstract = "We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.",
author = "A. Nidhi and V. Saripalli and Vijaykrishnan Narayanan and Y. Kimura and R. Arghavani and S. Datta",
year = "2012",
doi = "10.1109/DRC.2012.6256968",
language = "English (US)",
isbn = "9781467311618",
pages = "231--232",
booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

}

Nidhi, A, Saripalli, V, Narayanan, V, Kimura, Y, Arghavani, R & Datta, S 2012, Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs? in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256968, pp. 231-232, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256968

Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs? / Nidhi, A.; Saripalli, V.; Narayanan, Vijaykrishnan; Kimura, Y.; Arghavani, R.; Datta, S.

70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 231-232 6256968.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs?

AU - Nidhi, A.

AU - Saripalli, V.

AU - Narayanan, Vijaykrishnan

AU - Kimura, Y.

AU - Arghavani, R.

AU - Datta, S.

PY - 2012

Y1 - 2012

N2 - We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.

AB - We compared the impact of Fin LER and Lg variations in Si and In 0.53Ga 0.47As FINFETs, for the first time. Better electrostatics in In 0.53Ga 0.47As than in Si, due to higher effective channel length from lower SD doping in In 0.53Ga 0.47As, reduces Lg variation impact. Strong quantum confinement effects in In 0.53Ga 0.47As FINFET make them more sensitive to Fin LER variation than Si. However, the lower sensitivity to LG variation in In 0.53Ga 0.47As FINFETs compensates for the increased variation from quantum confinement effect. Interestingly, by considering both Fin LER and LG variations, both devices show similar sensitivity to variation. We conclude that tighter control of Fin LER in In 0.53Ga 0.47As together with improved short channel immunity will make III-VFINFETs a promising device for 0.5V and below logic applications.

UR - http://www.scopus.com/inward/record.url?scp=84866925602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866925602&partnerID=8YFLogxK

U2 - 10.1109/DRC.2012.6256968

DO - 10.1109/DRC.2012.6256968

M3 - Conference contribution

AN - SCOPUS:84866925602

SN - 9781467311618

SP - 231

EP - 232

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

ER -

Nidhi A, Saripalli V, Narayanan V, Kimura Y, Arghavani R, Datta S. Will strong quantum confinement effect limit low V CC logic application of III-V FINFETs? In 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 231-232. 6256968 https://doi.org/10.1109/DRC.2012.6256968

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