X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Y. Pei, C. Poblenz, A. L. Corrion, Rongming Chu, L. Shen, J. S. Speck, U. K. Mishra

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Abstract

A report is presented on the power performance of deep submicron AlGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10GHz, 70 power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30GHz, 31 PAE and 6.5 W/mm power density were achieved at a drain bias of 40V.

Original languageEnglish (US)
Pages (from-to)598-599
Number of pages2
JournalElectronics Letters
Volume44
Issue number9
DOIs
StatePublished - Apr 28 2008

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Pei, Y., Poblenz, C., Corrion, A. L., Chu, R., Shen, L., Speck, J. S., & Mishra, U. K. (2008). X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE. Electronics Letters, 44(9), 598-599. https://doi.org/10.1049/el:20080669