Abstract
X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.
| Original language | English (US) |
|---|---|
| Title of host publication | Common Themes and Mechanisms of Epitaxial Growth |
| Publisher | Publ by Materials Research Society |
| Pages | 137-143 |
| Number of pages | 7 |
| Volume | 312 |
| ISBN (Print) | 1558992081 |
| State | Published - Apr 13 1993 |
| Event | Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993 |
Other
| Other | Materials Research Society Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/12/93 → 4/15/93 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. / Nayak, S.; Redwing, Joan Marie; Kuech, T. F.; Phang, Y. H.; Savage, D. E.; Lagally, M. G.
Common Themes and Mechanisms of Epitaxial Growth. Vol. 312 Publ by Materials Research Society, 1993. p. 137-143.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers
AU - Nayak, S.
AU - Redwing, Joan Marie
AU - Kuech, T. F.
AU - Phang, Y. H.
AU - Savage, D. E.
AU - Lagally, M. G.
PY - 1993/4/13
Y1 - 1993/4/13
N2 - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.
AB - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.
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M3 - Conference contribution
SN - 1558992081
VL - 312
SP - 137
EP - 143
BT - Common Themes and Mechanisms of Epitaxial Growth
PB - Publ by Materials Research Society
ER -