X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers

S. Nayak, Joan Marie Redwing, T. F. Kuech, Y. H. Phang, D. E. Savage, M. G. Lagally

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

Original languageEnglish (US)
Title of host publicationCommon Themes and Mechanisms of Epitaxial Growth
PublisherPubl by Materials Research Society
Number of pages7
ISBN (Print)1558992081
StatePublished - Apr 13 1993
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993


OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nayak, S., Redwing, J. M., Kuech, T. F., Phang, Y. H., Savage, D. E., & Lagally, M. G. (1993). X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. In Common Themes and Mechanisms of Epitaxial Growth (Vol. 312, pp. 137-143). Publ by Materials Research Society.