@inproceedings{9d38da9c8bbf4896b535332fc505d45f,
title = "X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers",
abstract = "X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.",
author = "S. Nayak and Redwing, {J. M.} and Kuech, {T. F.} and Phang, {Y. H.} and Savage, {D. E.} and Lagally, {M. G.}",
year = "1993",
month = jan,
day = "1",
language = "English (US)",
isbn = "1558992081",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "137--143",
booktitle = "Common Themes and Mechanisms of Epitaxial Growth",
note = "Materials Research Society Spring Meeting ; Conference date: 12-04-1993 Through 15-04-1993",
}