X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers

S. Nayak, Joan Marie Redwing, T. F. Kuech, Y. H. Phang, D. E. Savage, M. G. Lagally

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

Original languageEnglish (US)
Title of host publicationCommon Themes and Mechanisms of Epitaxial Growth
PublisherPubl by Materials Research Society
Pages137-143
Number of pages7
Volume312
ISBN (Print)1558992081
StatePublished - Apr 13 1993
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: Apr 12 1993Apr 15 1993

Other

OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period4/12/934/15/93

Fingerprint

Multilayers
roughness
Surface roughness
X ray diffraction
diffraction
x rays
laminates
Photoluminescence
gallium arsenide
photoluminescence
X rays
curves
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nayak, S., Redwing, J. M., Kuech, T. F., Phang, Y. H., Savage, D. E., & Lagally, M. G. (1993). X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. In Common Themes and Mechanisms of Epitaxial Growth (Vol. 312, pp. 137-143). Publ by Materials Research Society.
Nayak, S. ; Redwing, Joan Marie ; Kuech, T. F. ; Phang, Y. H. ; Savage, D. E. ; Lagally, M. G. / X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. Common Themes and Mechanisms of Epitaxial Growth. Vol. 312 Publ by Materials Research Society, 1993. pp. 137-143
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abstract = "X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.",
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Nayak, S, Redwing, JM, Kuech, TF, Phang, YH, Savage, DE & Lagally, MG 1993, X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. in Common Themes and Mechanisms of Epitaxial Growth. vol. 312, Publ by Materials Research Society, pp. 137-143, Materials Research Society Spring Meeting, San Francisco, CA, USA, 4/12/93.

X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. / Nayak, S.; Redwing, Joan Marie; Kuech, T. F.; Phang, Y. H.; Savage, D. E.; Lagally, M. G.

Common Themes and Mechanisms of Epitaxial Growth. Vol. 312 Publ by Materials Research Society, 1993. p. 137-143.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers

AU - Nayak, S.

AU - Redwing, Joan Marie

AU - Kuech, T. F.

AU - Phang, Y. H.

AU - Savage, D. E.

AU - Lagally, M. G.

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N2 - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

AB - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

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Nayak S, Redwing JM, Kuech TF, Phang YH, Savage DE, Lagally MG. X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers. In Common Themes and Mechanisms of Epitaxial Growth. Vol. 312. Publ by Materials Research Society. 1993. p. 137-143