X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers

S. Nayak; Joan Marie Redwing; T. F. Kuech; Y. H. Phang; D. E. Savage; M. G. Lagally

X-ray diffraction determination of interface roughness in GaAs/Al_xGa_1-xAs multilayers

S. Nayak, Joan Marie Redwing, T. F. Kuech, Y. H. Phang, D. E. Savage, M. G. Lagally

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

X-ray diffraction has been used to quantify the interface roughness of GaAs/Al_xGa_1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al_0.3Ga_0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

Original language	English (US)
Title of host publication	Common Themes and Mechanisms of Epitaxial Growth
Publisher	Publ by Materials Research Society
Pages	137-143
Number of pages	7
Volume	312
ISBN (Print)	1558992081
State	Published - Apr 13 1993
Event	Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 15 1993

Other

Other	Materials Research Society Spring Meeting
City	San Francisco, CA, USA
Period	4/12/93 → 4/15/93

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Nayak, S., Redwing, J. M., Kuech, T. F., Phang, Y. H., Savage, D. E., & Lagally, M. G. (1993). X-ray diffraction determination of interface roughness in GaAs/Al_xGa_1-xAs multilayers. In Common Themes and Mechanisms of Epitaxial Growth (Vol. 312, pp. 137-143). Publ by Materials Research Society.

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title = "X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers",

abstract = "X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.",

author = "S. Nayak and Redwing, {Joan Marie} and Kuech, {T. F.} and Phang, {Y. H.} and Savage, {D. E.} and Lagally, {M. G.}",

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note = "Materials Research Society Spring Meeting ; Conference date: 12-04-1993 Through 15-04-1993",

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X-ray diffraction determination of interface roughness in GaAs/Al_xGa_1-xAs multilayers. / Nayak, S.; Redwing, Joan Marie; Kuech, T. F.; Phang, Y. H.; Savage, D. E.; Lagally, M. G.

Common Themes and Mechanisms of Epitaxial Growth. Vol. 312 Publ by Materials Research Society, 1993. p. 137-143.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - X-ray diffraction determination of interface roughness in GaAs/AlxGa1-xAs multilayers

AU - Nayak, S.

AU - Redwing, Joan Marie

AU - Kuech, T. F.

AU - Phang, Y. H.

AU - Savage, D. E.

AU - Lagally, M. G.

PY - 1993/4/13

Y1 - 1993/4/13

N2 - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

AB - X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

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