X-ray diffraction mapping of strain fields and chemical composition of SiGe:Si(001) quantum dot molecules

M. S. Leite, J. L. Gray, R. Hull, J. A. Floro, R. Magalhães-Paniago, G. Medeiros-Ribeiro

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7 Ge0.3 film grown by molecular beam epitaxy at 550°C and a 1 s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition.

Original languageEnglish (US)
Article number121308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number12
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'X-ray diffraction mapping of strain fields and chemical composition of SiGe:Si(001) quantum dot molecules'. Together they form a unique fingerprint.

  • Cite this