X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge

Yan Zhu, Nikhil Jain, Mantu K. Hudait, Deepam Maurya, Ronnie Varghese, Shashank Priya

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The oxidation states, interface, and band alignment properties of physical vapor deposited CeO2 films on epitaxial (100), (110), and (111)Ge were investigated by x-ray photoelectron spectroscopy (XPS). The cross-sectional transmission electron microscopy demonstrated the polycrystalline nature of the CeO2 film. XPS analysis showed multiple Ce3d and Ce4d oxidation states with a mixture of Ce3+ and Ce4+ components existing in CeO2. Angular resolved XPS investigations indicate that the CeO2 films mostly consist of Ce4+ oxidation states while the Ce3+ oxidation states are preferentially present near the surface. The CeO2/(100)Ge, CeO2/(110)Ge, and CeO 2/(111)Ge structures showed almost identical valence band offset (VBO) values of 1.6, 1.5, and 1.6 eV, respectively, using XPS measurements from Ce3d core level (CL) peaks. These (VBO) values were also supported by XPS measurements from shallow Ce4d CL binding energy peaks. The conduction band offset values between CeO2/Ge were ∼1.3 eV using the measured optical bandgap of CeO2. The XPS spectral analysis of cerium oxidation states and the measured band offset parameters for carrier confinement would offer an important path for the future design of Ge-based metal-oxide semiconductor devices.

Original languageEnglish (US)
Article number011217
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
StatePublished - Jan 1 2014

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Photoelectron spectroscopy
x ray spectroscopy
X ray photoelectron spectroscopy
photoelectron spectroscopy
X rays
Oxidation
oxidation
x rays
Core levels
Valence bands
Cerium
valence
MOS devices
Interface states
Optical band gaps
cerium
Conduction bands
Binding energy
semiconductor devices
metal oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge",
abstract = "The oxidation states, interface, and band alignment properties of physical vapor deposited CeO2 films on epitaxial (100), (110), and (111)Ge were investigated by x-ray photoelectron spectroscopy (XPS). The cross-sectional transmission electron microscopy demonstrated the polycrystalline nature of the CeO2 film. XPS analysis showed multiple Ce3d and Ce4d oxidation states with a mixture of Ce3+ and Ce4+ components existing in CeO2. Angular resolved XPS investigations indicate that the CeO2 films mostly consist of Ce4+ oxidation states while the Ce3+ oxidation states are preferentially present near the surface. The CeO2/(100)Ge, CeO2/(110)Ge, and CeO 2/(111)Ge structures showed almost identical valence band offset (VBO) values of 1.6, 1.5, and 1.6 eV, respectively, using XPS measurements from Ce3d core level (CL) peaks. These (VBO) values were also supported by XPS measurements from shallow Ce4d CL binding energy peaks. The conduction band offset values between CeO2/Ge were ∼1.3 eV using the measured optical bandgap of CeO2. The XPS spectral analysis of cerium oxidation states and the measured band offset parameters for carrier confinement would offer an important path for the future design of Ge-based metal-oxide semiconductor devices.",
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X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge. / Zhu, Yan; Jain, Nikhil; Hudait, Mantu K.; Maurya, Deepam; Varghese, Ronnie; Priya, Shashank.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 1, 011217, 01.01.2014.

Research output: Contribution to journalArticle

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AU - Zhu, Yan

AU - Jain, Nikhil

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AU - Varghese, Ronnie

AU - Priya, Shashank

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AB - The oxidation states, interface, and band alignment properties of physical vapor deposited CeO2 films on epitaxial (100), (110), and (111)Ge were investigated by x-ray photoelectron spectroscopy (XPS). The cross-sectional transmission electron microscopy demonstrated the polycrystalline nature of the CeO2 film. XPS analysis showed multiple Ce3d and Ce4d oxidation states with a mixture of Ce3+ and Ce4+ components existing in CeO2. Angular resolved XPS investigations indicate that the CeO2 films mostly consist of Ce4+ oxidation states while the Ce3+ oxidation states are preferentially present near the surface. The CeO2/(100)Ge, CeO2/(110)Ge, and CeO 2/(111)Ge structures showed almost identical valence band offset (VBO) values of 1.6, 1.5, and 1.6 eV, respectively, using XPS measurements from Ce3d core level (CL) peaks. These (VBO) values were also supported by XPS measurements from shallow Ce4d CL binding energy peaks. The conduction band offset values between CeO2/Ge were ∼1.3 eV using the measured optical bandgap of CeO2. The XPS spectral analysis of cerium oxidation states and the measured band offset parameters for carrier confinement would offer an important path for the future design of Ge-based metal-oxide semiconductor devices.

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