The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)