X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

S. D. Wolter, B. P. Luther, D. L. Waltemyer, C. Önneby, S. E. Mohney, R. J. Molnar

Research output: Contribution to journalArticle

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Abstract

The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750°C for up to 25 h. However, at 900°C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.

Original languageEnglish (US)
Pages (from-to)2156-2158
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number16
DOIs
StatePublished - Apr 21 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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