X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

K. A. Rickert, A. B. Ellis, F. J. Himpsel, H. Lu, W. Schaff, J. M. Redwing, F. Dwikusuma, T. F. Kuech

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Abstract

The effects of surface treatments, metal deposition and electron accumulation on InN were studied. Au deposited on annealed InN yielded a Fermi level 0.7 eV above the valence band maximum and Ti deposited on sputtered InN yielded a Fermi level 1.2 eV above the valence band maximum. The results suggested that if the smaller value of the band gap for InN was assumed, then none of the metal forms a Schottky barrier on InN.

Original languageEnglish (US)
Pages (from-to)3254-3256
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number19
DOIs
StatePublished - May 12 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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