Xe implantation in SiO2: Low-k applications

E. Ntsoenzok, H. Assaf, M. O. Ruault, S Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

SiO2 samples were implanted with 300 keV xenon at various doses: 0.5 to 521016 Xe/cm2. Asimplanted samples show that nm-size precipitates are created for these doses while bubble formation needs doses higher than 1016 Xe/cm2. Thermal annealing at 750°C results in the disappearance of nano-precipitates while bubbles/cavities remain stable even after annealing at 1100°C. Capacitance-voltage (C-V) measurements clearly indicate a strong decrease of the dielectric constant (k), consistent with bubble/cavity formation in SiO 2.

Original languageEnglish (US)
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages295-297
Number of pages3
DOIs
StatePublished - Aug 2 2007
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Ntsoenzok, E., Assaf, H., Ruault, M. O., & Ashok, S. (2007). Xe implantation in SiO2: Low-k applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 295-297). [4098090] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306211