Yellow photoluminescence in MOCVD-grown n-type GaN

E. F. Schubert, W. Grieshaber, K. S. Boutros, Joan Marie Redwing

Research output: Contribution to journalConference article

Abstract

The near-band gap and the "yellow" optical transitions in n-type GaN grown by MOCVD have been studied by photoluminescence experiments. The excitation density ranged from 5 × 10-6 W/cm-2 to 50 W/cm-2. The UV PL intensity increases linearly in the entire range of excitation density. The yellow PL intensity exhibits a linear dependence at low excitation densities and a square-root dependence at high excitation densities. A theoretical model is developed describing the intensity of the two radiative transitions between continuum states and one defect level deep in the band gap as a function of the excitation density, free carrier and defect concentrations. The calculated dependences of the two luminescence channels follow power laws with exponents of 1/2 and 1 depending on excitation density. These dependences are in very good agreement with experimental results. The measured intensity of the yellow luminescence does not saturate at high excitation densities. This rules out the possibility that the yellow PL could arise from a sequential transition via two deep levels in the gap. It is shown that the intensity modulation that frequently appears in the PL spectra is caused by a micro-cavity which is formed by the semiconductor-substrate and semiconductor-air interfaces. Finally, the dependence of the yellow luminescence intensity on n-type doping concentration indicates that the deep center causing the yellow luminescence is an acceptor-like level.

Original languageEnglish (US)
Pages (from-to)59-68
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3279
DOIs
StatePublished - Dec 1 1998
EventLight-Emitting Diodes: Research, Manufacturing, and Applications II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Fingerprint

MOCVD
Photoluminescence
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Luminescence
Excitation
photoluminescence
excitation
Energy gap
luminescence
Semiconductor materials
Defects
Band Gap
Optical transitions
Semiconductors
Doping (additives)
Modulation
Microcavity
Linear dependence
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

@article{57b788bd22bb44d0990db85451e21694,
title = "Yellow photoluminescence in MOCVD-grown n-type GaN",
abstract = "The near-band gap and the {"}yellow{"} optical transitions in n-type GaN grown by MOCVD have been studied by photoluminescence experiments. The excitation density ranged from 5 × 10-6 W/cm-2 to 50 W/cm-2. The UV PL intensity increases linearly in the entire range of excitation density. The yellow PL intensity exhibits a linear dependence at low excitation densities and a square-root dependence at high excitation densities. A theoretical model is developed describing the intensity of the two radiative transitions between continuum states and one defect level deep in the band gap as a function of the excitation density, free carrier and defect concentrations. The calculated dependences of the two luminescence channels follow power laws with exponents of 1/2 and 1 depending on excitation density. These dependences are in very good agreement with experimental results. The measured intensity of the yellow luminescence does not saturate at high excitation densities. This rules out the possibility that the yellow PL could arise from a sequential transition via two deep levels in the gap. It is shown that the intensity modulation that frequently appears in the PL spectra is caused by a micro-cavity which is formed by the semiconductor-substrate and semiconductor-air interfaces. Finally, the dependence of the yellow luminescence intensity on n-type doping concentration indicates that the deep center causing the yellow luminescence is an acceptor-like level.",
author = "Schubert, {E. F.} and W. Grieshaber and Boutros, {K. S.} and Redwing, {Joan Marie}",
year = "1998",
month = "12",
day = "1",
doi = "10.1117/12.304430",
language = "English (US)",
volume = "3279",
pages = "59--68",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Yellow photoluminescence in MOCVD-grown n-type GaN. / Schubert, E. F.; Grieshaber, W.; Boutros, K. S.; Redwing, Joan Marie.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3279, 01.12.1998, p. 59-68.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Yellow photoluminescence in MOCVD-grown n-type GaN

AU - Schubert, E. F.

AU - Grieshaber, W.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The near-band gap and the "yellow" optical transitions in n-type GaN grown by MOCVD have been studied by photoluminescence experiments. The excitation density ranged from 5 × 10-6 W/cm-2 to 50 W/cm-2. The UV PL intensity increases linearly in the entire range of excitation density. The yellow PL intensity exhibits a linear dependence at low excitation densities and a square-root dependence at high excitation densities. A theoretical model is developed describing the intensity of the two radiative transitions between continuum states and one defect level deep in the band gap as a function of the excitation density, free carrier and defect concentrations. The calculated dependences of the two luminescence channels follow power laws with exponents of 1/2 and 1 depending on excitation density. These dependences are in very good agreement with experimental results. The measured intensity of the yellow luminescence does not saturate at high excitation densities. This rules out the possibility that the yellow PL could arise from a sequential transition via two deep levels in the gap. It is shown that the intensity modulation that frequently appears in the PL spectra is caused by a micro-cavity which is formed by the semiconductor-substrate and semiconductor-air interfaces. Finally, the dependence of the yellow luminescence intensity on n-type doping concentration indicates that the deep center causing the yellow luminescence is an acceptor-like level.

AB - The near-band gap and the "yellow" optical transitions in n-type GaN grown by MOCVD have been studied by photoluminescence experiments. The excitation density ranged from 5 × 10-6 W/cm-2 to 50 W/cm-2. The UV PL intensity increases linearly in the entire range of excitation density. The yellow PL intensity exhibits a linear dependence at low excitation densities and a square-root dependence at high excitation densities. A theoretical model is developed describing the intensity of the two radiative transitions between continuum states and one defect level deep in the band gap as a function of the excitation density, free carrier and defect concentrations. The calculated dependences of the two luminescence channels follow power laws with exponents of 1/2 and 1 depending on excitation density. These dependences are in very good agreement with experimental results. The measured intensity of the yellow luminescence does not saturate at high excitation densities. This rules out the possibility that the yellow PL could arise from a sequential transition via two deep levels in the gap. It is shown that the intensity modulation that frequently appears in the PL spectra is caused by a micro-cavity which is formed by the semiconductor-substrate and semiconductor-air interfaces. Finally, the dependence of the yellow luminescence intensity on n-type doping concentration indicates that the deep center causing the yellow luminescence is an acceptor-like level.

UR - http://www.scopus.com/inward/record.url?scp=0032225642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032225642&partnerID=8YFLogxK

U2 - 10.1117/12.304430

DO - 10.1117/12.304430

M3 - Conference article

VL - 3279

SP - 59

EP - 68

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -