Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Corey J. Cochrane, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

Original languageEnglish (US)
Title of host publication2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-89
Number of pages2
ISBN (Print)9781479903504
DOIs
StatePublished - Jan 1 2013
Event2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, United States
Duration: Oct 13 2013Oct 17 2013

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/13/1310/17/13

Fingerprint

Dielectric films
Electric breakdown
Temperature
4-nitrobenzylthioinosine
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Cochrane, C. J., & Lenahan, P. M. (2013). Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. In 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 (pp. 88-89). [6804165] (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2013.6804165
Cochrane, Corey J. ; Lenahan, Patrick M. / Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 88-89 (IEEE International Integrated Reliability Workshop Final Report).
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Cochrane, CJ & Lenahan, PM 2013, Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. in 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013., 6804165, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 88-89, 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013, South Lake Tahoe, CA, United States, 10/13/13. https://doi.org/10.1109/IIRW.2013.6804165

Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. / Cochrane, Corey J.; Lenahan, Patrick M.

2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 88-89 6804165 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Cochrane CJ, Lenahan PM. Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB. In 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 88-89. 6804165. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2013.6804165