ZnO thin film, device, and circuit fabrication using low-temperature PECVD processes

Jie Sun, Devin A. Mourey, Dalong Zhao, Thomas Nelson Jackson

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD). ZnO thin-film transistors (TFTs) fabricated using ZnO and Al 2O 3 deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm 2/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >10 4. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV out/dV in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower mobility. For example, ZnO TFTs fabricated with low-leakage Al 2O 3 have mobility near 0.05 cm 2/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency at 60 V, likely limited by interface states.

Original languageEnglish (US)
Pages (from-to)755-759
Number of pages5
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
StatePublished - May 1 2008

Fingerprint

Thin film circuits
Thin film devices
cold plasmas
Thin film transistors
Plasma enhanced chemical vapor deposition
transistors
vapor deposition
Fabrication
fabrication
thin films
leakage
Interface states
Temperature
Threshold voltage
threshold voltage
integrated circuits
Integrated circuits
oscillators
slopes
oscillations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD). ZnO thin-film transistors (TFTs) fabricated using ZnO and Al 2O 3 deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm 2/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >10 4. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV out/dV in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower mobility. For example, ZnO TFTs fabricated with low-leakage Al 2O 3 have mobility near 0.05 cm 2/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency at 60 V, likely limited by interface states.",
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ZnO thin film, device, and circuit fabrication using low-temperature PECVD processes. / Sun, Jie; Mourey, Devin A.; Zhao, Dalong; Jackson, Thomas Nelson.

In: Journal of Electronic Materials, Vol. 37, No. 5, 01.05.2008, p. 755-759.

Research output: Contribution to journalArticle

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T1 - ZnO thin film, device, and circuit fabrication using low-temperature PECVD processes

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AU - Mourey, Devin A.

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