ZnO thin-film transistor ring oscillators with 31-ns propagation delay

Jie Sun, Devin A. Mourey, Dalong Zhao, Sung Kyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, Thomas Nelson Jackson

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

Original languageEnglish (US)
Pages (from-to)721-723
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
StatePublished - Jul 1 2008

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Thin film transistors
Atomic layer deposition
Networks (circuits)
Electric potential
Aluminum
Atmospheric pressure
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Sun, Jie ; Mourey, Devin A. ; Zhao, Dalong ; Park, Sung Kyu ; Nelson, Shelby F. ; Levy, David H. ; Freeman, Diane ; Cowdery-Corvan, Peter ; Tutt, Lee ; Jackson, Thomas Nelson. / ZnO thin-film transistor ring oscillators with 31-ns propagation delay. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 7. pp. 721-723.
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Sun, J, Mourey, DA, Zhao, D, Park, SK, Nelson, SF, Levy, DH, Freeman, D, Cowdery-Corvan, P, Tutt, L & Jackson, TN 2008, 'ZnO thin-film transistor ring oscillators with 31-ns propagation delay', IEEE Electron Device Letters, vol. 29, no. 7, pp. 721-723. https://doi.org/10.1109/LED.2008.923206

ZnO thin-film transistor ring oscillators with 31-ns propagation delay. / Sun, Jie; Mourey, Devin A.; Zhao, Dalong; Park, Sung Kyu; Nelson, Shelby F.; Levy, David H.; Freeman, Diane; Cowdery-Corvan, Peter; Tutt, Lee; Jackson, Thomas Nelson.

In: IEEE Electron Device Letters, Vol. 29, No. 7, 01.07.2008, p. 721-723.

Research output: Contribution to journalArticle

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