ZnO thin-film transistor ring oscillators with 31-ns propagation delay

Jie Sun, Devin A. Mourey, Dalong Zhao, Sung Kyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, Thomas Nelson Jackson

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We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 °C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V · s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ∼ 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

Original languageEnglish (US)
Pages (from-to)721-723
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - Jul 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Sun, J., Mourey, D. A., Zhao, D., Park, S. K., Nelson, S. F., Levy, D. H., Freeman, D., Cowdery-Corvan, P., Tutt, L., & Jackson, T. N. (2008). ZnO thin-film transistor ring oscillators with 31-ns propagation delay. IEEE Electron Device Letters, 29(7), 721-723. https://doi.org/10.1109/LED.2008.923206