ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay

Jie Sun, Devin A. Mourey, Dalong Zhao, Sung Kyu Park, Shelby F. Nelson, David H. Levy, Diane Freeman, Peter Cowdery-Corvan, Lee Tutt, Thomas Nelson Jackson

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

We have fabricated simple circuits, including ring oscillators, using ZnO thin films deposited by low temperature (200°C) atmospheric pressure chemical vapor deposition. Bottom gate TFTs with aluminum source and drain contacts typically had field effect mobility >15 cm2/V·s. Seven stage ring oscillators operated at frequency as high as 1 MHz for a supply voltage of 32 V, corresponding to a propagation delay less than 75 nsec/stage. These circuits also had propagation delay less than 150 ns/stage at a supply voltage of 18 V. To our knowledge, these are the fastest ZnO circuits reported to date.

Original languageEnglish (US)
Article number4419005
Pages (from-to)579-582
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Sun, J., Mourey, D. A., Zhao, D., Park, S. K., Nelson, S. F., Levy, D. H., Freeman, D., Cowdery-Corvan, P., Tutt, L., & Jackson, T. N. (2007). ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay. Technical Digest - International Electron Devices Meeting, IEDM, 579-582. [4419005]. https://doi.org/10.1109/IEDM.2007.4419005