ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

Devin A. Mourey, Dalong A. Zhao, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

Original languageEnglish (US)
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - Dec 1 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

Fingerprint

Thin film circuits
Atomic layer deposition
cold plasmas
Thin film transistors
atomic layer epitaxy
polyimides
Polyimides
transistors
Plasmas
Oxidants
Glass
glass
field effect transistors
thin films
propagation
Networks (circuits)
Substrates
Temperature
oscillators
coatings

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Mourey, D. A., Zhao, D. A., & Jackson, T. N. (2009). ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest [5424388] https://doi.org/10.1109/IEDM.2009.5424388
Mourey, Devin A. ; Zhao, Dalong A. ; Jackson, Thomas Nelson. / ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009.
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Mourey, DA, Zhao, DA & Jackson, TN 2009, ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424388, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 12/7/09. https://doi.org/10.1109/IEDM.2009.5424388

ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. / Mourey, Devin A.; Zhao, Dalong A.; Jackson, Thomas Nelson.

2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424388.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

AB - We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

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Mourey DA, Zhao DA, Jackson TN. ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 5424388 https://doi.org/10.1109/IEDM.2009.5424388