ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD

Devin A. Mourey, Dalong A. Zhao, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report using a novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200 °C. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformal coatings and enhancement-mode MOSFETs from uncompensated films. Our PEALD ZnO TFTs have field-effect mobility of 20-30 cm2/V s and simple gate-self-aligned saturated-load ring oscillators on glass with 2.5 μm gate length had propagation delay <10 ns/stage at VDD = 18 V. We also report the fastest oxide semiconductor circuits on polyimide substrates with propagation delay of ~60 ns/stage at VDD = 18 V.

Original languageEnglish (US)
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - Dec 1 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Mourey, D. A., Zhao, D. A., & Jackson, T. N. (2009). ZnO thin film transistors and circuits on glass and polyimide by low-temperature PEALD. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest [5424388] https://doi.org/10.1109/IEDM.2009.5424388