ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

J. Israel Ramirez, Yuanyuan V. Li, Dalong A. Zhao, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - Dec 1 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

Fingerprint

Plasma deposition
Atomic layer deposition
Thin film transistors
Oxidants
Plasmas
Temperature
Pumps
Substrates
Gases
Costs

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ramirez, J. I., Li, Y. V., Zhao, D. A., & Jackson, T. N. (2011). ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135265] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135265
Ramirez, J. Israel ; Li, Yuanyuan V. ; Zhao, Dalong A. ; Jackson, Thomas N. / ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).
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abstract = "Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.",
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Ramirez, JI, Li, YV, Zhao, DA & Jackson, TN 2011, ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135265, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135265

ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. / Ramirez, J. Israel; Li, Yuanyuan V.; Zhao, Dalong A.; Jackson, Thomas N.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135265 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

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Ramirez JI, Li YV, Zhao DA, Jackson TN. ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135265. (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135265