ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

J. Israel Ramirez, Yuanyuan V. Li, Dalong A. Zhao, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - Dec 1 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Ramirez, J. I., Li, Y. V., Zhao, D. A., & Jackson, T. N. (2011). ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135265] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135265