ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

J. Israel Ramirez, Yuanyuan V. Li, Dalong A. Zhao, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

Fingerprint

Plasma deposition
Atomic layer deposition
Thin film transistors
Oxidants
Plasmas
Temperature
Pumps
Substrates
Gases
Costs

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ramirez, J. I., Li, Y. V., Zhao, D. A., & Jackson, T. N. (2011). ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135265] https://doi.org/10.1109/ISDRS.2011.6135265
Ramirez, J. Israel ; Li, Yuanyuan V. ; Zhao, Dalong A. ; Jackson, Thomas Nelson. / ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011.
@inproceedings{5f97aaaaeb634e8ea89889ac7af19525,
title = "ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor",
abstract = "Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.",
author = "Ramirez, {J. Israel} and Li, {Yuanyuan V.} and Zhao, {Dalong A.} and Jackson, {Thomas Nelson}",
year = "2011",
doi = "10.1109/ISDRS.2011.6135265",
language = "English (US)",
isbn = "9781457717550",
booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

}

Ramirez, JI, Li, YV, Zhao, DA & Jackson, TN 2011, ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135265, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135265

ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. / Ramirez, J. Israel; Li, Yuanyuan V.; Zhao, Dalong A.; Jackson, Thomas Nelson.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135265.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor

AU - Ramirez, J. Israel

AU - Li, Yuanyuan V.

AU - Zhao, Dalong A.

AU - Jackson, Thomas Nelson

PY - 2011

Y1 - 2011

N2 - Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

AB - Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al 2O 3 deposited at low temperature (200C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al 2O 3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al 2O 3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.

UR - http://www.scopus.com/inward/record.url?scp=84863155766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863155766&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2011.6135265

DO - 10.1109/ISDRS.2011.6135265

M3 - Conference contribution

SN - 9781457717550

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

ER -

Ramirez JI, Li YV, Zhao DA, Jackson TN. ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135265 https://doi.org/10.1109/ISDRS.2011.6135265