ZnO thin film transistors for more than just displays

Haoyu U. Li, J. Israel Ramirez, Kaige G. Sun, Yiyang Gong, Yuanyuan V. Li, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19.6.1-19.6.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

Fingerprint

Thin film transistors
transistors
thin films
Thin film circuits
Atomic layer deposition
Substrates
atomic layer epitaxy
microelectronics
Microelectronics
casts
Display devices
Plasmas
cycles
radii

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Li, H. U., Ramirez, J. I., Sun, K. G., Gong, Y., Li, Y. V., & Jackson, T. N. (2015). ZnO thin film transistors for more than just displays. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 19.6.1-19.6.4). [7409736] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409736
Li, Haoyu U. ; Ramirez, J. Israel ; Sun, Kaige G. ; Gong, Yiyang ; Li, Yuanyuan V. ; Jackson, Thomas N. / ZnO thin film transistors for more than just displays. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 19.6.1-19.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).
@inproceedings{bce9ec83d03349c79911fea0451fe4ed,
title = "ZnO thin film transistors for more than just displays",
abstract = "We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.",
author = "Li, {Haoyu U.} and Ramirez, {J. Israel} and Sun, {Kaige G.} and Yiyang Gong and Li, {Yuanyuan V.} and Jackson, {Thomas N.}",
year = "2015",
month = "2",
day = "16",
doi = "10.1109/IEDM.2015.7409736",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "19.6.1--19.6.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
address = "United States",

}

Li, HU, Ramirez, JI, Sun, KG, Gong, Y, Li, YV & Jackson, TN 2015, ZnO thin film transistors for more than just displays. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409736, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 19.6.1-19.6.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409736

ZnO thin film transistors for more than just displays. / Li, Haoyu U.; Ramirez, J. Israel; Sun, Kaige G.; Gong, Yiyang; Li, Yuanyuan V.; Jackson, Thomas N.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 19.6.1-19.6.4 7409736 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - ZnO thin film transistors for more than just displays

AU - Li, Haoyu U.

AU - Ramirez, J. Israel

AU - Sun, Kaige G.

AU - Gong, Yiyang

AU - Li, Yuanyuan V.

AU - Jackson, Thomas N.

PY - 2015/2/16

Y1 - 2015/2/16

N2 - We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.

AB - We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.

UR - http://www.scopus.com/inward/record.url?scp=84964089350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964089350&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2015.7409736

DO - 10.1109/IEDM.2015.7409736

M3 - Conference contribution

AN - SCOPUS:84964089350

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 19.6.1-19.6.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Li HU, Ramirez JI, Sun KG, Gong Y, Li YV, Jackson TN. ZnO thin film transistors for more than just displays. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 19.6.1-19.6.4. 7409736. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2015.7409736